| PART |
Description |
Maker |
| KM23V8100D |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY29F800ABT-55 HY29F800ABR-90 HY29F800ABR-12 HY29F |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位1Mx8/512Kx16），5伏只，闪
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位Mx8/512Kx16），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| K6T8016C3M-TB70 K6T8016C3M-TF70 K6T8016C3M-RB70 K6 |
512Kx16 bit Low Power CMOS Static RAM Data Sheet
512Kx16 bit Low Power CMOS Static RAM 512Kx16位低功耗CMOS静RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K6T8016C3M K6T8016C3M-B K6T8016C3M-F K6T8016C3M-RB |
512Kx16 bit Low Power CMOS Static RAM
|
Samsung semiconductor
|
| MX29SL800CBTI-90 MX29SL800CTXHI-90G MX29SL800CTXBC |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
|
Macronix International
http://
|
| 29SL800CT-90 29SL800CB-90 MX29SL800CTXHC-90 MX29SL |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29LV800A |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MXIC
|
| MX26LV800BTC-55G MX26LV800BTC-70 MX26LV800BTC-70G |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
| UT7164-55PCA6 UT7164-55PSA6 UT7164-85PCC6 UT7164-5 |
Combo Memory 2M x 16 Flash 256kx16 SRAM 3.3v 56FBGA
Combo Memory 2M x 16 Flash 512kx16 SRAM 3.3v 56FBGA Tray
Combo Memory 4M x 16 Flash 512kx16/1mx8 SRAM 3.3v 73FBGA Tray
x8 SRAM x8的SRAM
|
ITT, Corp.
|
| K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM 1Mx8位低功耗和低电压的CMOS静态RAM
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
